november 2011 doc id 18076 rev 3 1/12 12 SPV1001 cool bypass switch for photovoltaic applications features i f = 16 a, v r = 40 v very low forward voltage drop very low reverse leakage current 175 c operating junction temperature applications photovoltaic panels description the SPV1001 is a system-i n-package solution for photovoltaic applications to perform cool bypass rectification similar to that of a conventional schottky diode but with much lower forward voltage drop and reverse leakage current. the device consists of a power mosfet transistor which charges a capacitor during the off time, and drives its gate during the on time using the charge previously stored in the capacitor. the on and off times are set to reduce the average voltage drop across the drain and source terminals, resulting in reduced power dissipation. a k a a k k a to220 d 2 pa k table 1. device summary order codes package packaging SPV1001d40 d 2 pac k tu b e SPV1001d40tr tape and reel SPV1001t40 to220 tube www.st.com
maximum ratings SPV1001 2/12 doc id 18076 rev 3 1 maximum ratings 1.1 absolute maximum ratings 1.2 thermal data table 2. absolute maximum ratings symbol parameter range [min, max] unit v r max dc reverse voltage 40 v i f max. forward current 16 a i fsm non repetitive peak surge (half-wave, single-phase, 60 hz) 250 a esd level human body level 8 k v table 3. thermal data symbol parameter value unit r thjc thermal resistance, junction-to-ambient (d 2 pak, to220) 1.5 c/w t j junction temperature operating range -40 to 175 c t stg storage temperature range -40 to 175 c
SPV1001 electrical characteristics doc id 18076 rev 3 3/12 2 electrical characteristics table 4. electrical characteristics symbol parameter test condition values unit min typ max v f, av g avg forward voltage drop if = 16a (1) 1. for correct power dissipation and heatsink sizing, please refer to figure 1 , 4 e 7 t j = 25c - 230 - mv if = 8a (1) t j = 25c - 120 - mv t j = 125c - 270 - mv i r reverse leakage current vr = 40v t j = 25c - 1 - a t j = 125c - 10 - a d ton/t ratio if = 8a (1) t j = 25c - 95% - - t j = 125c - 75% - - v f forward voltage drop if = 8a, t off tj = 25c - 920 - mv t j = 125c - 600 - mv if = 8a (1) , t on t j = 25c - 70 - mv t j = 125c - 160 - mv
device description SPV1001 4/12 doc id 18076 rev 3 3 device description a photovoltaic panel consists of a series of pv cells. in optimal conditions, all the cells are equally irradiated and function at the same current level. however, during normal operation some cells may become partially shaded or ob scured. these shaded cells limit the current generated by the fully irradiated cells and, in the extreme cases where these cells are totally obscured, the current flow is blocked. in this case the shaded cells behave like a load, and the current generated from the fully irradiated cells produces overvoltages which can reach the breakdown threshold. this phenomenon, known as a ?hot spot?, can cause overheating of the shaded cells and, in some cases, even permanent damage resulting in current leakage. to prevent hot spots, therefore, bypass diodes are connected in parallel to the cell strings. the device described here has the same functionality as a schottky diode, but with improved performance. it features very low forward voltage drop and reverse leakage current. it consists of a power mosfet transistor which charges a capacitor during the off time, and drives its gate during the on time using the charge previously stored in the capacitor. the on and off times are set to reduce the average voltage drop across the drain and source terminals, resulting in reduced power dissipation.
SPV1001 device description doc id 18076 rev 3 5/12 figure 1. average forward power dissipation vs average forward current figure 2. forward voltage f p f p f p f p 7 ? & |